Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

Details Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

2005-01-10

arxiv.org/abs/cond-mat/0501212v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1209/epl/i2006-10042-8

We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.

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