Topological insulator quantum dot with tunable barriers

Details Topological insulator quantum dot with tunable barriers Topological insulator quantum dot with tunable barriers

2012-01-18

arxiv.org/abs/1201.3910v1

Nano Lett., 2012, 12 (1), pp 469--472

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1021/nl203851g

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices
are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to
realize semiconducting barriers which may be tuned from Ohmic to tunneling
conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with
large charging energy >5 meV, with additional features implying excited states.

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