Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te

Details Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te

2010-10-22

arxiv.org/abs/1010.4628v1

Physics

Condensed Matter

Materials Science

13 pages, 4 figures

Scientific paper

10.1103/PhysRevB.82.201312

We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surface-like interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topological insulating Sb2Te3 layers in GSTs and can be crucial to the electronic property of the compounds. These interface states are found to be quite resilient to atomic disorders but sensitive to the uniaxial strains. We presented the mechanisms that destroy the topological insulating order in GSTs and investigated the role of Ge migration that is believed to be responsible for the amorphorization of GSTs.

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