Topological Aspects of Surface States in Semiconductors

Details Topological Aspects of Surface States in Semiconductors Topological Aspects of Surface States in Semiconductors

2008-02-18

arxiv.org/abs/0802.2425v2

Physics

Condensed Matter

Strongly Correlated Electrons

10 pages, 9 figures; two-column

Scientific paper

Topological aspects of surface states in semiconductors are studied by an adiabatic deformation which connects a realistic system and a decoupled covalent-bond model. Two topological invariants are focused. One is a quantized Berry phase, and the other is a number of the edge states. A winding number as another topological invariant is also considered. The surface states of Si and Ge at (111), (110), and (100) surfaces are classified by the topological invariants. Surface states of the GaAs as heterosemiconductors are also discussed.

Affiliated with

Also associated with

No associations

Rating

Topological Aspects of Surface States in Semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Topological Aspects of Surface States in Semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Topological Aspects of Surface States in Semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-197431