Top and side gated epitaxial graphene field effect transistors

Details Top and side gated epitaxial graphene field effect transistors Top and side gated epitaxial graphene field effect transistors

2009-07-31

arxiv.org/abs/0908.0017v1

Phys. Status Solidi A 207, No. 2, 286-290 (2010)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1002/pssa.200982453

Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side gate FET structures are promising.

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