Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Details Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

2008-07-22

arxiv.org/abs/0807.3460v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2965112

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.

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