Time-dependent Currents of a Single-electron Transistor in Dissipative Environments

Details Time-dependent Currents of a Single-electron Transistor in Dissipative Environments Time-dependent Currents of a Single-electron Transistor in Dissipative Environments

2003-09-30

arxiv.org/abs/cond-mat/0309697v1

Phys. Rev. B 68, 205403 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 5 figures, to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.68.205403

Currents of the single-electron transistors driven by time-dependent fields via external dissipative circuits are investigated theoretically. By expressing the external circuit in terms of driven harmonic oscillators and using the reduced-density operator method, we derive time- and environment-dependent tunneling rates in the regime of sequential tunneling and present expressions for both displacement and tunneling currents with these tunneling rates. It is found that the dissipative environments affect tunneling currents in two ways; the determination of driving voltages at tunneling junctions and the depletion of particle-hole distribution functions. Considering a simple dissipative circuit, we discuss the effects of the environment on tunneling currents in both static and time-dependent cases.

Affiliated with

Also associated with

No associations

Rating

Time-dependent Currents of a Single-electron Transistor in Dissipative Environments does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Time-dependent Currents of a Single-electron Transistor in Dissipative Environments, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Time-dependent Currents of a Single-electron Transistor in Dissipative Environments will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-279748