THz-pump -- THz-probe spectroscopy of semiconductors at high field strengths

Details THz-pump -- THz-probe spectroscopy of semiconductors at high field strengths THz-pump -- THz-probe spectroscopy of semiconductors at high field strengths

2009-04-16

arxiv.org/abs/0904.2516v1

J. Opt. Soc. Am. B, 26 A29-A34 (2009)

Physics

Condensed Matter

Materials Science

7 figures, J. Opt. Soc. Am. B. Special issue of THz wave photonics (2009)

Scientific paper

10.1364/JOSAB.26.000A29

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.

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