THz emission induced by optical beating in nanometer-length field-effect-transistors

Details THz emission induced by optical beating in nanometer-length field-effect-transistors THz emission induced by optical beating in nanometer-length field-effect-transistors

2010-09-02

arxiv.org/abs/1009.0426v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Under review in Phys. Rev. B

Scientific paper

Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the channel at the frequency $f_0$ of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of $f_0\pm 10$ GHz (with $f_0$ from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. Numerical results support that such a high quality of the emission resonances can be explained by the approach of an instability in the transistor channel.

Affiliated with

Also associated with

No associations

Rating

THz emission induced by optical beating in nanometer-length field-effect-transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with THz emission induced by optical beating in nanometer-length field-effect-transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and THz emission induced by optical beating in nanometer-length field-effect-transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-376157