Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate

Details Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate

2011-06-30

arxiv.org/abs/1107.0085v1

Phys. Rev. B 80, 241407(R) (2009)

Physics

Condensed Matter

Materials Science

An addendum has been added for the arXiv version only, including one figure with five panels. Published paper can be found at

Scientific paper

10.1103/PhysRevB.80.241407

The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.

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