Thickness monitoring of graphene on SiC using low-energy electron diffraction

Details Thickness monitoring of graphene on SiC using low-energy electron diffraction Thickness monitoring of graphene on SiC using low-energy electron diffraction

2010-02-04

arxiv.org/abs/1002.0997v1

J. Vac. Sci. Technol. A 28, 958 (2010)

Physics

Condensed Matter

Materials Science

To appear in J. Vac. Sci. Technol. A

Scientific paper

The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot intensities for graphene compared to SiC is measured for a series of samples of known graphene thickness (determined using low-energy electron microscopy). It is found that this ratio is effective for determining graphene thicknesses in the range 1 to 3 monolayers. Effects of a distribution of graphene thicknesses on this method of thickness determination are considered.

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