Thickness-independent surface transport channel in topological insulator Bi2Se3 thin films

Details Thickness-independent surface transport channel in topological insulator Bi2Se3 thin films Thickness-independent surface transport channel in topological insulator Bi2Se3 thin films

2011-04-29

arxiv.org/abs/1104.5709v2

Physics

Condensed Matter

Materials Science

Scientific paper

With significant improvement in the quality of topological insulator (TI) Bi2Se3 thin films, we report observation of a thickness-independent surface transport channel, dominating over a wide thickness range. The TI surface layer was found to be less than 1 quintuple-layer (QL, 1 QL \approx 1 nm) thick, and contributed a thickness-independent sheet carrier density of 1.5\times1013 cm-2 over three orders of thickness (2 - 2,750 QL). The surface-to-bulk conductance ratio became larger than 50 % for films thinner than 300 QL and reached up to 470 % for 4 QL, with the surface-to-bulk conductivity ratio as large as 11,000 %. Weak antilocalization effect also showed similar thickness-independence.

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