Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

Details Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3 Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

2011-04-05

arxiv.org/abs/1104.0913v2

Physical Review B 84, 073109 (2011)

Physics

Condensed Matter

Materials Science

16 pages, 4 figures

Scientific paper

10.1103/PhysRevB.84.073109

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 \mu m). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak anti-localization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.

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