Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

Details Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

2003-04-07

arxiv.org/abs/cond-mat/0304164v1

Physics

Condensed Matter

Superconductivity

10 pages, 4 figures

Scientific paper

10.1063/1.1583852

We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.

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