Thermoelectric transport perpendicular to thin film heterostructures using Monte Carlo technique

Details Thermoelectric transport perpendicular to thin film heterostructures using Monte Carlo technique Thermoelectric transport perpendicular to thin film heterostructures using Monte Carlo technique

2006-10-03

arxiv.org/abs/cond-mat/0610056v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.74.195331

The Monte Carlo technique is used to calculate electrical as well as thermoelectric transport properties across thin film heterostructures. We study a thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, when the barrier thickness is in 50nm-2000nm range. We found that with decreasing size, the effective Seebeck coefficient is increased substantially. The transition between pure ballistic thermionic transport and fully diffusive thermoelectric transport is also described.

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