Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene

Details Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene

2010-05-26

arxiv.org/abs/1005.4739v3

Phys. Rev. B 82, 245416 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

published version

Scientific paper

10.1103/PhysRevB.82.245416

Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical Mott formula with a hyperbolic dispersion relation. TEP for a high carrier density shows a linear temperature dependence, which demonstrates a weak electron-phonon interaction in the bilayer graphene. For a low carrier density, a deviation from the Mott relation is observed at high temperatures and is attributed to the low Fermi temperature in the bilayer graphene. Oscillating TEP and the Nernst effect for varying carrier density, observed in a high magnetic field, are qualitatively explained by the two dimensionality of the system.

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