Thermoelectric Properties of Ho-doped Bi1-xSbx

Details Thermoelectric Properties of Ho-doped Bi1-xSbx Thermoelectric Properties of Ho-doped Bi1-xSbx

2012-01-30

arxiv.org/abs/1201.6304v1

Physics

Condensed Matter

Materials Science

Scientific paper

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.

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