Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition

Details Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition

2006-03-22

arxiv.org/abs/cond-mat/0603581v1

Phys. Rev. Lett. 96, 216407 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.96.216407

We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a ten-fold difference in r_s, the compressibility of both electrons and holes is well described by the theory of nonlinear screening of the random potential. We show that the resistivity exhibits a scaling behavior near the percolation threshold found from analysis of the compressibility. Notably, the percolation transition occurs at a much lower density than the crossover.

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