Thermal shot noise in top-gated single carbon nanotube field effect transistors

Details Thermal shot noise in top-gated single carbon nanotube field effect transistors Thermal shot noise in top-gated single carbon nanotube field effect transistors

2010-02-03

arxiv.org/abs/1002.0706v2

Applied Physics Letters 96, 192103 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

10.1063/1.3425889

The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of $13\mathrm{\mu e/\sqrt{Hz}}$ in the 0.2-$0.8 \mathrm{GHz}$ band.

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