Thermal effects on electron-phonon interaction in silicon nanostructures

Details Thermal effects on electron-phonon interaction in silicon nanostructures Thermal effects on electron-phonon interaction in silicon nanostructures

2009-12-15

arxiv.org/abs/0912.2945v1

Silicon (Springer) Vol2, page: 73-77, 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 Pages, 3 Figures and 1 Table

Scientific paper

10.1007/s12633-010-9040-0

Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data are analyzed successfully using theoretical Raman line-shape generated by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persists, heating effects start dominating at higher temperatures than room tempaerature.

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