Theory of transport through noncollinear single-electron spin-valve transistors

Details Theory of transport through noncollinear single-electron spin-valve transistors Theory of transport through noncollinear single-electron spin-valve transistors

2011-09-27

arxiv.org/abs/1109.5800v2

Phys. Rev. B 84, 235409 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 11 figures

Scientific paper

10.1103/PhysRevB.84.235409

We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric current is influenced by Coulomb charging and by spin accumulation. Furthermore, the interplay of Coulomb interaction and tunnel coupling to spin-polarized leads yields a many-body exchange field, in which the accumulated island spin precesses. We analyze the effects of this exchange field in both the linear and nonlinear transport regime. In particular, we find that the exchange field can give rise to a high sensitivity of the island's spin orientation on the gate voltage.

Affiliated with

Also associated with

No associations

Rating

Theory of transport through noncollinear single-electron spin-valve transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Theory of transport through noncollinear single-electron spin-valve transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Theory of transport through noncollinear single-electron spin-valve transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-62179