Theory of superfast fronts of impact ionization in semiconductor structures

Details Theory of superfast fronts of impact ionization in semiconductor structures Theory of superfast fronts of impact ionization in semiconductor structures

2007-05-14

arxiv.org/abs/0705.2028v1

J. Appl. Phys. 102, 034508, 2007

Physics

Condensed Matter

Materials Science

18 pagers, 10 figures

Scientific paper

10.1063/1.2767378

We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.

Affiliated with

Also associated with

No associations

Rating

Theory of superfast fronts of impact ionization in semiconductor structures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Theory of superfast fronts of impact ionization in semiconductor structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Theory of superfast fronts of impact ionization in semiconductor structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-622530