Theory of semiconductor quantum-wire based single- and two-qubit gates

Details Theory of semiconductor quantum-wire based single- and two-qubit gates Theory of semiconductor quantum-wire based single- and two-qubit gates

2007-10-18

arxiv.org/abs/0710.3572v1

Phys. Rev. B 76, 195301 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 13 figures, RevTex4 two-column format, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.76.195301

A GaAs/AlGaAs based two-qubit quantum device that allows the controlled generation and straightforward detection of entanglement by measuring a stationary current-voltage characteristic is proposed. We have developed a two-particle Green's function method of open systems and calculate the properties of three-dimensional interacting entangled systems non-perturbatively. We present concrete device designs and detailed, charge self-consistent predictions. One of the qubits is an all-electric Mach-Zehnder interferometer that consists of two electrostatically defined quantum wires with coupling windows, whereas the second qubit is an electrostatically defined double quantum dot located in a second two-dimensional electron gas beneath the quantum wires. We find that the entanglement of the device can be controlled externally by tuning the tunneling coupling between the two quantum dots.

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