Theory of exciton fine structure in semiconductor quantum dots: quantum dot anisotropy and lateral electric field

Details Theory of exciton fine structure in semiconductor quantum dots: quantum dot anisotropy and lateral electric field Theory of exciton fine structure in semiconductor quantum dots: quantum dot anisotropy and lateral electric field

2009-10-22

arxiv.org/abs/0910.4345v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange interaction is derived within the k*p effective mass approximation (EMA). The exchange matrix elements of the Hamiltonian are expressed explicitly in terms of electron and hole envelope functions. The matrix element responsible for the "bright" exciton splitting is identified and analyzed. An excitonic fine structure for a model quantum dot with quasi- two-dimensional anisotropic harmonic oscillator (2DLAHO) confining potential is analyzed as a function of the shape anisotropy, size and applied lateral electric field.

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