Theory of Electron Spin Relaxation in ZnO

Details Theory of Electron Spin Relaxation in ZnO Theory of Electron Spin Relaxation in ZnO

2008-08-21

arxiv.org/abs/0808.2913v3

Physics

Condensed Matter

Materials Science

7 pages, 1 figure: minor changes Accepted by Phys. Rev. B

Scientific paper

10.1103/PhysRevB.79.115204

Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $\tau_{s}$ has been measured by optical orientation experiments, and it shows a surprising non-monotonic behavior with temperature. We explain this behavior by invoking spin exchange between localized and extended states. Interestingly, the effects of spin-orbit coupling are by no means negligible, in spite of the relatively small valence band splitting. This is due to the wurtzite crystal structure of ZnO. Detailed analysis allows us to characterize the impurity binding energies and densities, showing that optical orientation experiments can be used as a characterization tool for semiconductor samples.

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