Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

Details Theory and design of quantum cascade lasers in (111) n-type Si/SiGe Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

2009-08-04

arxiv.org/abs/0908.0557v1

Phys. Rev. B 78, 035420 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 6 figures

Scientific paper

10.1103/PhysRevB.78.035420

Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 angstroms across interfaces is tolerable.

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