Theoretical evidence for the semi-insulating character of AlN

Details Theoretical evidence for the semi-insulating character of AlN Theoretical evidence for the semi-insulating character of AlN

1998-07-13

arxiv.org/abs/cond-mat/9807190v1

Physics

Condensed Matter

Materials Science

RevTeX 3 pages, 1 figure

Scientific paper

10.1063/1.369197

We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg_ 0.45 eV) and less soluble than in GaN; at further variance with GaN, both the extrinsic donors Si_Al and C_Al, and the native donor V_N (the anion vacancy) are found to be deep (about 1 to 3 eV below the conduction). We thus predict that doped AlN will generally turn out to be semi-insulating in the normally achieved Al-rich conditions, in agreement with the known doping difficulties of high-x AlGaN alloys.

Affiliated with

Also associated with

No associations

Rating

Theoretical evidence for the semi-insulating character of AlN does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Theoretical evidence for the semi-insulating character of AlN, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Theoretical evidence for the semi-insulating character of AlN will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-563062