Theoretical consideration of pits recording and etching processes in chalcogenide vitreous semiconductors

Details Theoretical consideration of pits recording and etching processes in chalcogenide vitreous semiconductors Theoretical consideration of pits recording and etching processes in chalcogenide vitreous semiconductors

2005-05-10

arxiv.org/abs/cond-mat/0505237v1

Physics

Condensed Matter

Soft Condensed Matter

14 pages, 1 scheme, 9 figures

Scientific paper

10.1016/j.optcom.2005.09.037

We propose theoretical consideration and computer modeling of information pit recording and etching processes in chalcogenide vitreous semiconductors. We demonstrate how to record and develop information pits with the necessary shape and sizes in chalcogenide photoresists using gaussian laser beam and selective etching. It has been shown that phototransformed region cross-section could be almost trapezoidal or parabolic depending on the photoresist material optical absorption, recording beam power, exposure, etchant selectivity and etching time. After illumination, the spatial distribution of photo-transformed material fraction was calculated using the Kolmogorov-Awrami equation. Analyzing obtained results, we derived a rather simple approximate analytical expression for the dependence of the photo-transformed region width and depth on the recording gaussian beam power, radius and exposure time. Then the selective etching process was simulated numerically. The obtained results quantitatively describes the characteristics of pits recorded by the gaussian laser beam in thin layers of As40S60 chalcogenide semiconductor.

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