The theory of transvers Nernst--Ettingshausen effect and thermopower of heated (hot) charge carriers in nondegenerate semiconductors in the case of high anisotropy of phonons distribution function

Details The theory of transvers Nernst--Ettingshausen effect and thermopower of heated (hot) charge carriers in nondegenerate semiconductors in the case of high anisotropy of phonons distribution function The theory of transvers Nernst--Ettingshausen effect and thermopower of heated (hot) charge carriers in nondegenerate semiconductors in the case of high anisotropy of phonons distribution function

2001-12-10

arxiv.org/abs/cond-mat/0112162v1

Physics

Condensed Matter

18 pages LaTex formatted

Scientific paper

The transverse Nernst--Ettingshausen effect and thermopower of hot charge carriers in nondegenerate impure semiconductors placed at high electric and nonquantized magnetic fields in the nondiffusion approximation is studied. Arbitrary heating and mutual drag of electrons and long wavelength phonons interacting with electrons are considered. The spectrum of electrons is assumed to be strong nonparabolic in Kane two--band approximation. The case when the electron concentration is high and frequent interelectronic collisions lead to the equilibrium symmetric part of the electron distribution function with effective electron temperature is considered.

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