The structure and properties of vacancies in Si nano-crystals calculated by real-space pseudopotential methods

Details The structure and properties of vacancies in Si nano-crystals calculated by real-space pseudopotential methods The structure and properties of vacancies in Si nano-crystals calculated by real-space pseudopotential methods

2007-10-10

arxiv.org/abs/0710.2099v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1016/j.physb.2007.09.016

The structure and properties of vacancies in a 2 nm Si nano-crystal are studied using a real space density functional theory/pseudopotential method. It is observed that a vacancy's electronic properties and energy of formation are directly related to the local symmetry of the vacancy site. The formation energy for vacancies and Frenkel pair are calculated. It is found that both defects have lower energy in smaller crystals. In a 2 nm nano-crystal the energy to form a Frenkel pair is 1.7 eV and the energy to form a vacancy is no larger than 2.3 eV. The energy barrier for vacancy diffusion is examined via a nudged elastic band algorithm.

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