The stability of the fractional quantum Hall effect in topological insulators

Details The stability of the fractional quantum Hall effect in topological insulators The stability of the fractional quantum Hall effect in topological insulators

2011-06-22

arxiv.org/abs/1106.4418v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 2 figures

Scientific paper

With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some experiments have reported intra-Landau level structure that is suggestive of fractional quantum Hall effect. This paper discusses the feasibility of fractional quantum Hall effect from a theoretical perspective, and argues that while this effect should occur, ideally, in the $n=0$ and $|n|=1$ Landau levels, it is ruled out in higher $|n|$ Landau levels. Unlike graphene, the fractional quantum Hall effect in topological insulators is predicted to show an interesting asymmetry between $n=1$ and $n=-1$ Landau levels due to spin-orbit coupling.

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