The signature of a double quantum-dot structure in the I-V characteristics of a complex system

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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12 pages 7 figures

Scientific paper

10.1103/PhysRevB.73.035331

We demonstrate that by carefully analyzing the temperature dependent characteristics of the I-V measurements for a given complex system it is possible to determine whether it is composed of a single, double or multiple quantum-dot structure. Our approach is based on the orthodox theory for a double-dot case and is capable of simulating I-V characteristics of systems with any resistance and capacitance values and for temperatures corresponding to thermal energies larger than the dot level spacing. We compare I-V characteristics of single-dot and double-dot systems and show that for a given measured I-V curve considering the possibility of a second dot is equivalent to decreasing the fit temperature. Thus, our method allows one to gain information about the structure of an experimental system based on an I-V measurement.

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