The role of step edge diffusion in epitaxial crystal growth

Details The role of step edge diffusion in epitaxial crystal growth The role of step edge diffusion in epitaxial crystal growth

1998-08-14

arxiv.org/abs/cond-mat/9808149v3

Physics

Condensed Matter

Statistical Mechanics

revised and enlarged version 12 pages, 5 figures, to appear in Surface Science

Scientific paper

10.1016/S0039-6028(99)00761-X

The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound like structures. By comparing the limiting cases of absent, very fast (significant), and slow SED we demonstrate how the details of this process control both the shape of the emerging structures as well as the scaling behavior. We find a sharp transition from significant SED to intermediate values of SED, and a continuous one for vanishing SED. We argue that one should be able to control these features of the surface in experiments by variation of the flux and substrate temperature.

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