The role of electron-hole recombination in organic magnetoresistance

Details The role of electron-hole recombination in organic magnetoresistance The role of electron-hole recombination in organic magnetoresistance

2008-05-16

arxiv.org/abs/0805.2546v4

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.79.201202

Magneto-electrical measurements were performed on diodes and bulk heterojunction solar cells (BHSCs) to clarify the role of formation of coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin film devices. BHSCs are suitable model systems because they effectively quench excitons but the probability of forming e-h pairs in them can be tuned over orders of magnitude by the choice of material and solvent in the blend. We have systematically varied the e-h recombination coefficients, which are directly proportional to the probability for the charge carriers to meet in space, and found that a reduced probability of electrons and holes meeting in space lead to disappearance of the MR. Our results clearly show that MR is a direct consequence of e-h pair formation. We also found that the MR line shape follows a power law-dependence of B0.5 at higher fields.

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