The quasi-free-standing nature of graphene on H-saturated SiC(0001)

Details The quasi-free-standing nature of graphene on H-saturated SiC(0001) The quasi-free-standing nature of graphene on H-saturated SiC(0001)

2011-03-21

arxiv.org/abs/1103.3997v2

Appl. Phys. Lett. 99, 122106 (2011)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures, accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.3643034

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".

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