The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide

Details The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide

2011-09-30

arxiv.org/abs/1109.6907v1

Physics

Condensed Matter

Materials Science

10 pages, 1 figure

Scientific paper

We explain the robust p-type doping observed for quasi-free standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal polytype of the material and independent of any details of the interface formation. We show that sign and magnitude of the polarization are in perfect agreement with the doping level observed in the graphene layer. With this mechanism, models based on hypothetical acceptor-type defects as they are discussed so far are obsolete. The n-type doping of epitaxial graphene is explained conventionally by donor-like states associated with the buffer layer and its interface to the substrate which overcompensate the polarization doping.

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