Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2008-11-10
Phys. Rev. B 79, 235307 (2009)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
6 pages, 5 figures; extended version (accepted to Phys. Rev. B)
Scientific paper
10.1103/PhysRevB.79.235307
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density-dependent conductivity vanishes as $\sigma (n) \propto (n - n_p)^p$, with the exponent $p \sim 1.2$ being consistent with a percolation transition. The `metallic' behavior of $\sigma (T)$ for $n > n_p$ is shown to be well-described by a semi-classical Boltzmann theory, and we observe the standard weak localization-induced negative magnetoresistance behavior, as expected in a normal Fermi liquid, in the metallic phase.
Carroll Sean M.
Childs K.
Eng Kevin
Hwang Euyheon H.
Lilly Michael P.
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