The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs

Details The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs

2008-10-15

arxiv.org/abs/0810.2692v1

Physics

Condensed Matter

Materials Science

Scientific paper

The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($\mu^+ + e^-$) center at the tetrahedral As site can capture the track's holes and therefore behaves like a donor.

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