The metal-insulator transition in Si:X: Anomalous response to a magnetic field

Details The metal-insulator transition in Si:X: Anomalous response to a magnetic field The metal-insulator transition in Si:X: Anomalous response to a magnetic field

1997-06-30

arxiv.org/abs/cond-mat/9706309v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages (including figures)

Scientific paper

10.1103/PhysRevB.58.6692

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.

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