The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

Details The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

2001-05-03

arxiv.org/abs/cond-mat/0105081v2

Phys. Rev. Lett. v88, 196404 (2002)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.88.196404

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility $\chi^*$, the effective mass $m^*$, and the $g^*$-factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of $\chi^*$ by a factor of $\sim 4.7$.

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