The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction

Details The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction

1998-12-03

arxiv.org/abs/cond-mat/9812048v1

Europhys. Lett. 38, 55(1997)

Physics

Condensed Matter

4 pages and 2 figures, LATEX

Scientific paper

10.1209/epl/i1997-00534-y

We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance $\Delta R/R$ can be more than 80% at low temperatures.

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