The influence of the mutual drag of carrier-phonon system on the thermopower and the transverse Nernst-Ettingshausen effect

Details The influence of the mutual drag of carrier-phonon system on the thermopower and the transverse Nernst-Ettingshausen effect The influence of the mutual drag of carrier-phonon system on the thermopower and the transverse Nernst-Ettingshausen effect

2001-07-03

arxiv.org/abs/cond-mat/0107058v4

Physics

Condensed Matter

19 pages, RevTex formatted Journal Ref: to appear in Physical Review B

Scientific paper

The thermopower and Nernst-Ettingshausen (NE) effect in degenerate semiconductors and semimetals placed in high electric and magnetic fields are calculated by taking into account the heating of both electrons and phonons as well as their thermal and mutual drags. The magnetic and electric field dependences of the thermoelectric power and the transverse NE voltage are found in analytical forms. It is shown that in weak and high transverse magnetic fields, the electronic and phonon parts of NE coefficients change their sign for some scattering mechanisms.

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