The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

Details The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

2011-11-02

arxiv.org/abs/1111.0558v2

Applied Physics Letters 100, 023108 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3675620

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower quantum dot radius due to the suppression of the Land$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$ V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating phonon induced spin-flip rate through spin-orbit coupling with the application of anisotropic gate potential in a regime where the g-factor changes its sign.

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