The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

Details The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$ The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

2003-09-03

arxiv.org/abs/cond-mat/0309082v1

J. Appl. Phys. 94, 7159 (2003)

Physics

Condensed Matter

5 pages, 4 figures, 3 tables, 2 authors, and a logo

Scientific paper

10.1063/1.1622994

Using Monte Carlo simulations, we demonstrate that including ionized impurity
scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the
correct Hall parameters. Our results show good agreement with the experimental
data of Joelsson et.al. (JAP, 1997).

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