The exchange bias phenomenon in uncompensated interfaces: Theory and Monte Carlo simulations

Details The exchange bias phenomenon in uncompensated interfaces: Theory and Monte Carlo simulations The exchange bias phenomenon in uncompensated interfaces: Theory and Monte Carlo simulations

2010-12-13

arxiv.org/abs/1012.2895v2

J. Phys.: Condens. Matter 23 386004 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 11 figures

Scientific paper

10.1088/0953-8984/23/38/386004

We performed Monte Carlo simulations in a bilayer system composed by two thin films, one ferromagnetic (FM) and the other antiferromagnetic (AFM). Two lattice structures for the films were considered: simple cubic (sc) and a body center cubic (bcc). In both lattices structures we imposed an uncompensated interfacial spin structure, in particular we emulated a FeF2-FM system in the case of the (bcc) lattice. Our analysis focused on the incidence of the interfacial strength interactions between the films J_eb and the effect of thermal fluctuations on the bias field H_EB. We first performed Monte Carlo simulations on a microscopic model based on classical Heisenberg spin variables. To analyze the simulation results we also introduced a simplified model that assumes coherent rotation of spins located on the same layer parallel to the interface. We found that, depending on the AFM film anisotropy to exchange ratio, the bias field is either controlled by the intrinsic pinning of a domain wall parallel to the interface or by the stability of the first AFM layer (quasi domain wall) near the interface.

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