The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

Details The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

1996-07-19

arxiv.org/abs/mtrl-th/9607012v1

Physics

Condensed Matter

Materials Science

4 pages, 1 figure, to appear in "The Physics of Semiconductors"

Scientific paper

The equilibrium shape of strained InAs quantum dots grown epitaxially on a
GaAs(001) substrate is derived as a function of volume. InAs surface energies
are calculated within density-functional theory, and a continuum approach is
applied for the elastic relaxation energies.

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