The Electronic States of Two Oppositely doped Mott Insulators Bilayers

Details The Electronic States of Two Oppositely doped Mott Insulators Bilayers The Electronic States of Two Oppositely doped Mott Insulators Bilayers

2006-05-10

arxiv.org/abs/cond-mat/0605284v2

Europhys. Lett. 76, 891 (2006)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 1 figure

Scientific paper

10.1209/epl/i2006-10371-6

We study the effect of Coulomb interaction between two oppositely doped low-dimensional tJ model systems. We exactly show that, in the one-dimensional case, an arbitrarily weak interaction leads to the formation of charge neutral electron-hole pairs. We then use two different mean-field theories to address the two-dimensional case, where inter-layer excitons also form and condense. We propose that this results in new features which have no analog in single layers, such as the emergence of an insulating spin liquid phase. Our simple bilayer model might have relevance to the physics of doped Mott insulator interfaces and of the new four layer Ba2CaCu4O8 compound.

Affiliated with

Also associated with

No associations

Rating

The Electronic States of Two Oppositely doped Mott Insulators Bilayers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The Electronic States of Two Oppositely doped Mott Insulators Bilayers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The Electronic States of Two Oppositely doped Mott Insulators Bilayers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-469248