The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors

Details The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors

2012-03-19

arxiv.org/abs/1203.4264v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

10 pages, 8 figures. Submitted to Phys. Rev. B

Scientific paper

A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar interactions have little time to operate between hopping events. We find an angle-of-field dependence of the magnetoresistance that agrees with previous experiments and numerical simulations. In addition we report new magnetoresistive behavior that critically depends upon the amount of anisotropy in the dipolar interaction.

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