The effects of interface morphology on Schottky barrier heights: a case study on Al/GaAs(001)

Details The effects of interface morphology on Schottky barrier heights: a case study on Al/GaAs(001) The effects of interface morphology on Schottky barrier heights: a case study on Al/GaAs(001)

1997-04-18

arxiv.org/abs/cond-mat/9704157v1

Physics

Condensed Matter

Materials Science

5 pages, latex file, 2 postscript figures automatically included

Scientific paper

10.1103/PhysRevB.56.14921

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural distortions on the metal side---including elongations of the metal-semiconductor bond (i.e. interface strain)---whereas it strongly depends on the interface structure on the semiconductor side. A rationale for these findings is given in terms of the interface dipole generated by the ionic effective charges.

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