The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs

Details The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs

2007-11-12

arxiv.org/abs/0711.1690v1

Physics

Condensed Matter

Soft Condensed Matter

Submitted for Proceedings of SPIE Microelectronics, MEMS and Nanotechnology Conference, Canberra, Australia, 4-7 Dec. 07. 8 Pa

Scientific paper

10.1117/12.759015

There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function of the relevant growth parameters. Here we present a study of the dependence of the yield of useful crystals (defined as crystals with at least one dimension of order 1 mm) on the temperature and volume flow of carrier gas used in the physical vapour growth process.

Affiliated with

Also associated with

No associations

Rating

The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-128260